spd 10n10 data sheet 1 06.99 sipmos power transistor product summary drain source voltage 100 v ds v drain-source on-state resistance w 0.2 r ds ( on ) i d continuous drain current 10 a features n channel enhancement mode avalanche rated d v /d t rated pin 1 pin 2 pin 3 g d s packaging type package ordering code SPD10N10 tape and reel p-to252 q67040-s4119 spu10n10 tube q67040-s4111-a2 p-to251 maximum ratings , at t j = 25 ?c, unless otherwise specified parameter symbol unit value continuous drain current t c = 25 ?c t c = 100 ?c 10 6.3 i d a pulsed drain current t c = 25 ?c i dpulse 40 avalanche energy, single pulse i d = 10 a, v dd = 25 v, r gs = 25 w mj e as 59 avalanche energy, periodic limited by t j max 4 e ar reverse diode d v /d t i s = 10 a, v ds = 0 v, d i /d t = 200 a/s d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 ?c p tot 40 w operating and storage temperature t j , t st g ?c -55... +175 55/150/56 iec climatic category; din iec 68-1 preliminary data
spd 10n10 data sheet 2 06.99 thermal characteristics parameter values symbol unit typ. max. min. characteristics r thjc - 3.1 k/w thermal resistance, junction - case - thermal resistance, junction - ambient, leded r thja - 100 - - - - 75 50 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja electrical characteristics , at t j = 25 ?c, unless otherwise specified parameter symbol unit values min. max. typ. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma - v (br)dss 100 - v gate threshold voltage, v gs = v ds i d = 1 ma v gs(th) 4 3 2.1 zero gate voltage drain current v ds = 100 v, v gs = 0 v, t j = 25 ?c v ds = 100 v, v gs = 0 v, t j = 125 ?c - - i dss a 1 100 0.1 - gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 na 100 drain-source on-state resistance v gs = 10 v, i d = 6 a r ds(on) - 0.15 0.2 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
spd 10n10 data sheet 3 06.99 electrical characteristics , at t j = 25 ?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = 6 a g fs 3 4.3 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 400 530 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 125 180 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 70 105 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 3 a, r g = 50 w t d(on) - 10 15 ns rise time v dd = 30 v, v gs = 10 v, i d = 3 a, r g = 50 w t r - 45 70 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 3 a, r g = 50 w t d(off) - 55 75 fall time v dd = 30 v, v gs = 10 v, i d = 3 a, r g = 50 w t f - 40 55
spd 10n10 data sheet 4 06.99 electrical characteristics , at t j = 25 ?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics gate to source charge v dd = 80 v, i d = 10 a 7 nc 4.5 q gs - - 29.6 q gd gate to drain charge v dd = 80 v, i d = 10 a 45 gate charge total v dd = 80 v, i d = 10 a, v gs = 0 to 10 v - 46 69 q g gate plateau voltage v dd = 80 v, i d = 10 a v (plateau) 6.8 - v - reverse diode inverse diode continuous forward current t c = 25 ?c i s - - 10 a inverse diode direct current,pulsed t c = 25 ?c i sm - - 40 inverse diode forward voltage v gs = 0 v, i f = 20 a v sd - 1.4 v 1.6 reverse recovery time v r = 30 v, i f = i s , d i f /d t = 100 a/s t rr - 170 ns 255 reverse recovery charge v r = 30 v, i f = l s , d i f /d t = 100 a/s q rr - c 0.3 0.45
spd 10n10 data sheet 5 06.99 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 ?c 160 t c 0 5 10 15 20 25 30 35 w 45 SPD10N10 p tot drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 ?c 160 t c 0 1 2 3 4 5 6 7 8 9 a 11 SPD10N10 i d transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w SPD10N10 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 ?c 10 -1 10 0 10 1 10 2 10 3 v v ds -1 10 0 10 1 10 2 10 a SPD10N10 i d r ds(on) = v ds / i d dc 10 ms 1 ms 100 s t p = 43.0 s
spd 10n10 data sheet 6 06.99 typ. output characteristics i d = f ( v ds ) parameter: t p = 80 s 0 2 4 6 8 10 12 14 16 18 v 21 v ds 0 2 4 6 8 10 12 14 16 18 20 a 24 SPD10N10 i d v gs [v] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 8.5 k k 9.0 l p tot = 40 w l 10.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 4 8 12 16 a 24 i d 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 w 0.65 SPD10N10 r ds(on) v gs [v] = b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on) max 0 1 2 3 4 5 6 7 8 v 10 v gs 0 2 4 6 8 10 12 14 16 18 20 a 24 i d typ. forward transconductance g fs = f ( i d ) ; t j = 25?c parameter: g fs 0 2 4 6 8 10 12 14 16 18 a 22 i d 0 1 2 3 4 5 s 7 g fs
spd 10n10 data sheet 7 06.99 drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 6 a, v gs = 10 v -60 -20 20 60 100 140 ?c 200 t j 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 w 0.75 SPD10N10 r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter : v gs = v ds , i d = 1 ma -60 -20 20 60 100 ?c 160 t j 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 v 5.0 v gs(th) min typ max typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ds 1 10 2 10 3 10 4 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f ( v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -1 10 0 10 1 10 2 10 a SPD10N10 i f t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
spd 10n10 data sheet 8 06.99 typ. gate charge v gs = f ( q gate ) parameter: i d puls = 10 a 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 SPD10N10 v gs ds max v 0,8 ds max v 0,2 avalanche energy e as = f ( t j ) parameter: i d = 10 a, v dd = 25 v r gs = 25 w 20 40 60 80 100 120 ?c 160 t j 0 5 10 15 20 25 30 35 40 45 50 mj 60 e as drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 ?c 180 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 v 120 SPD10N10 v (br)dss
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